[PC-2-5] Modification of Silicon Surface Produced by Electric Field Enhanced Oxidation Through Native Oxide

Yasunori EJIRI、Masatoshi YASUTAKE、Takeo HATTORI (1.Department of Electrical and Electronic Engineering, Musashi Institute of Technology、2.Scientific Instruments Division, Development Department, Seiko Instruments Inc, Takatsuka Unit)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PC-2-6] Time Evolution of Electrostatic Force Induced by Contact-Electrified Charges on Thin Silicon Oxide Surface

Yoshinobu FUKANO、Takayuki UCHIHASHI、Yasuhiro SUGAWARA、Yoshiki YAMANISHI、Takahiko OASA、Seizo MORITA (1.Department of Physics, Faculty of Science, Hiroshima University、2.Advanced Technology Research Labs., Sumitomo Metal Industries, Ltd.)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PC-2-7] Scaling Analysis of SiO2/Si Interface Roughness by Atomic Force Microscopy

Tatsuo YOSHINOBU、Atsushi IWAMOTO、Hiroshi IWASAKI (1.The Institute of Scientific and Industrial Research, Osaka University)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PC-2-8] Epitaxially Grown Microcrystals in Thermally Oxidized Amorphous SiO2 Film on Si(001) Wafers

Isao TAKAHASHI、Kouki NAKANO、Jimpei HARADA、Takayoshi SHIMURA、Masataka UMENO (1.Department of Applied Physics, Nagoya University、2.Department of Precision Engineering, Osaka University)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PC-2-9] FT-IR-RAS Analysis of Native Oxide Grown on Si(111)

Shuzo Fujimura、Hiroki Ogawa、Kenji Ishikawa、Carlos Inomata、Haruhisa Mori (1.Basic Process Development Division 1-1, C523, FUJITSU LIMITED)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PC-2-10] Atomic-Order Planarization of Ultra-Thin SiO2/Si(001) Interfaces

Masaaki NIWA、Takashi KOUZAKI、Kenji OKADA、Robert SINCLAIR (1.Semiconductor Research Center, Matsushita Electric Ind. Co., Ltd.、2.Matsushita Technoresearch Inc.、3.Materials Science and Engineering, Stanford University)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PC-2-11] Electron Tunneling Through Ultra-Thin Gate Oxide Formed on Hydrogen-Terminated Si(100) Surfaces

M. Hiroshima、T. Yasaka、S. Miyazaki、M. Hirose (1.Department of Electrical Engineering, Hiroshima University)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PC-2-12] Multipurpose Cleaning by H2SO4/H2O2/HF Solution

T. OHNISHI、M. ENDO、K. YANO、N. NOMURA (1.Semiconductor Research Center Matsushita Electric Industrial Co., Ltd.)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PC-2-13] Surface Structure and NH4F-Etching Kinetics of Si (112) and (113)

Ken FUJITA、Norio HIRASHITA (1.VLSI Research and Development Center, Oki Electric Industry Co., Ltd.)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PC-2-14] Hydrogenation Effects on the Specific Contact Resistivity of Al(1%Si) and TiSi2 Contact to the Polysilicon

Wen Luh Yang、Tan Fu Lei、Chung Len Lee (1.Institute and Department of Electrical Engineering, Feng Chia University、2.Institute and Department of Electronics, National Chiao Tung University)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

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