Hot Carrier Effects in Sub-0.1 μm MOSFETs

F. Balestra; T. Matsumoto; T. Shimatani; M. Tsuno; H. Nakabayashi; M. Koyanagi

doi:https://doi.org/10.7567/SSDM.1994.A-10-3

1994 International Conference on Solid State Devices and Materials

Aug 23, 1994 - Aug 26, 1994
Pacifico Yokohama, Yokohama, Japan

[A-10-3] Hot Carrier Effects in Sub-0.1 μm MOSFETs

F. Balestra, T. Matsumoto, T. Shimatani, M. Tsuno, H. Nakabayashi, M. Koyanagi (1.Faculty of Engineering, Tohoku University, 2.Research Center for Integrated Systems, Hiroshima University)

https://doi.org/10.7567/SSDM.1994.A-10-3

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