Kink Effect in 0.1 μm Bulk Si MOSFETs

T. Matsumoto; F. Balestra; T. Shimatani; M. Tsuno; H. Nakabayashi; M. Koyanagi

doi:https://doi.org/10.7567/SSDM.1994.A-10-4

1994 International Conference on Solid State Devices and Materials

Aug 23, 1994 - Aug 26, 1994
Pacifico Yokohama, Yokohama, Japan

[A-10-4] Kink Effect in 0.1 μm Bulk Si MOSFETs

T. Matsumoto, F. Balestra, T. Shimatani, M. Tsuno, H. Nakabayashi, M. Koyanagi (1.Faculty of Engineering, Tohoku University, 2.Research Center for Integrated Systems, Hiroshima University)

https://doi.org/10.7567/SSDM.1994.A-10-4

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