[A-12-4] 256 Mbit High Density CMOS Non Volatile Memories Field Isolation by Using High Temperature Poly Buffer LOCOS(HTPBL)
S. Deleonibus、P. Spinelli、F. Vinet、M. Heitzmann、G. Guegan、C. Leroux
(1.LETI(CEA-Technologies Avancees)-Department de Microelectronique)
https://doi.org/10.7567/SSDM.1994.A-12-4