Study on the Fundamental Electrical Properties of Ultra-Thin Oxides Grown by Low Temperature Microwave Plasma Afterglow Oxidation

P. C. Chen; Klaus Y. J. Hsu; J. Y. Lin; H. L. Hwang

doi:https://doi.org/10.7567/SSDM.1994.A-5-2

[A-5-2] Study on the Fundamental Electrical Properties of Ultra-Thin Oxides Grown by Low Temperature Microwave Plasma Afterglow Oxidation

P. C. Chen、Klaus Y. J. Hsu、J. Y. Lin、H. L. Hwang (1.Department of Electrical Engineering, National Tsing Hua University、2.Department of Electrical Engineering, Chung Cheng Institute of Technology)

https://doi.org/10.7567/SSDM.1994.A-5-2

1994 International Conference on Solid State Devices and Materials

[A-5-2] Study on the Fundamental Electrical Properties of Ultra-Thin Oxides Grown by Low Temperature Microwave Plasma Afterglow Oxidation