A Consistent Model for Polarity Dependence of Threshold Voltage Shift in Fowler-Nordheim Stressed CMOS Transistors

Tomasz BROZEK; Chand R. VISWANATHAN

doi:https://doi.org/10.7567/SSDM.1994.A-5-3

[A-5-3] A Consistent Model for Polarity Dependence of Threshold Voltage Shift in Fowler-Nordheim Stressed CMOS Transistors

Tomasz BROZEK、Chand R. VISWANATHAN (1.Department of Electrical Engineering, University of California、2.Institute of Microelectronics and Optoelectronics, Warsaw University of Technology)

https://doi.org/10.7567/SSDM.1994.A-5-3

1994 International Conference on Solid State Devices and Materials

[A-5-3] A Consistent Model for Polarity Dependence of Threshold Voltage Shift in Fowler-Nordheim Stressed CMOS Transistors