[A-8-5] Reducing the Reverse-Bias Current in 450℃-Annealed n+p Junction by Hydrogen Radical Sintering

M. M. Oka, A. Nakada, K. Tomita, T. Shibata, T. Ohmi, T. Nitta (1.Department of Electronic Engineering, Faculty of Engineering, Tohoku University, 2.Device Development Center, Hitachi Ltd.)

https://doi.org/10.7567/SSDM.1994.A-8-5