[A-8-5] Reducing the Reverse-Bias Current in 450℃-Annealed n+p Junction by Hydrogen Radical Sintering

M. M. Oka、A. Nakada、K. Tomita、T. Shibata、T. Ohmi、T. Nitta (1.Department of Electronic Engineering, Faculty of Engineering, Tohoku University、2.Device Development Center, Hitachi Ltd.)

https://doi.org/10.7567/SSDM.1994.A-8-5