[C-5-3] A Buried-Channel WNx/W Self-Aligned GaAs MESFET Process with Selectively-Implanted Channel and Undoped Epitaxial Surface Layers for MMIC Applications

Kazuya Nishihori, Yoshiaki Kitaura, Masami Nagaoka, Yoshikazu Tanabe, Masakatsu Mihara, Misao Yoshimura, Mayumi Hirose, Naotaka Uchitomi (1.Toshiba Research and Development Center)

https://doi.org/10.7567/SSDM.1994.C-5-3