[C-5-3] A Buried-Channel WNx/W Self-Aligned GaAs MESFET Process with Selectively-Implanted Channel and Undoped Epitaxial Surface Layers for MMIC Applications

Kazuya Nishihori、Yoshiaki Kitaura、Masami Nagaoka、Yoshikazu Tanabe、Masakatsu Mihara、Misao Yoshimura、Mayumi Hirose、Naotaka Uchitomi (1.Toshiba Research and Development Center)

https://doi.org/10.7567/SSDM.1994.C-5-3