[C-6-1] Effects of a Compositionally Graded InxGa1-xAs Base in Abrupt-Emitter InP/InGaAs HBTs

K. Kurishima, H. Nakajima, S. Yamahata, T. Kobayashi, Y. Matsuoka (1.NTT LSI Laboratories, 2.NTT Radio Communication Systems Laboratories)

https://doi.org/10.7567/SSDM.1994.C-6-1