[C-6-1] Effects of a Compositionally Graded InxGa1-xAs Base in Abrupt-Emitter InP/InGaAs HBTs

K. Kurishima、H. Nakajima、S. Yamahata、T. Kobayashi、Y. Matsuoka (1.NTT LSI Laboratories、2.NTT Radio Communication Systems Laboratories)

https://doi.org/10.7567/SSDM.1994.C-6-1