[C-8-4] Device-Quality SiO2/Si(100) and SiO2/Si(111) Interfaces Formed by Plasma-Assisted Oxidation and Deposition Processes

Tetsuji Yasuda、Y. Ma、G. Lucovsky (1.North Carolina State University, Department of Physics)

https://doi.org/10.7567/SSDM.1994.C-8-4