The Japan Society of Applied Physics

[C-9-4] Nitridation of SiO2 in NO Ambient for Ultrathin Oxynitride Dielectric Formation

M. Bhat, J. Kim, J. Yan, G. W. Yoon, L. K. Han, D. L. Kwong (1.Microelectronics Research Center, Department of Electrical and Computer Engineering BRC-MER 2.606A/79950, The University of Texas)

https://doi.org/10.7567/SSDM.1994.C-9-4