[C-9-5] High Quality ONO Gate Dielectrics Fabricated by In-Situ RTCVD

G. W. Yoon、J. Yan、L. K. Han、J. Kim、D. L. Kwong (1.Microelectronics Research Center, Department of Electrical and Computer Engineering BRC-MER 2.606A/79950, The university of Texas at Austin)

https://doi.org/10.7567/SSDM.1994.C-9-5