Silicon: Germanium Heterojunction Bipolar Transistors; From Experiment to Technology

B. S. Meyerson; D. L. Harame; M. M. Gilbert; K. T. Schonenberg; T. Tice; B. Scharf

doi:https://doi.org/10.7567/SSDM.1994.D-2-2

1994 International Conference on Solid State Devices and Materials

1994年8月23日〜 1994年8月26日
Pacifico Yokohama, Yokohama, Japan

[D-2-2] Silicon: Germanium Heterojunction Bipolar Transistors; From Experiment to Technology

B. S. Meyerson、D. L. Harame、M. M. Gilbert、K. T. Schonenberg、T. Tice、B. Scharf (1.IBM Research Division, IBM T. J. Watson Res. Cntr.、2.Analog Devices Inc.)

https://doi.org/10.7567/SSDM.1994.D-2-2

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