Silicon: Germanium Heterojunction Bipolar Transistors; From Experiment to Technology

B. S. Meyerson; D. L. Harame; M. M. Gilbert; K. T. Schonenberg; T. Tice; B. Scharf

doi:https://doi.org/10.7567/SSDM.1994.D-2-2

1994 International Conference on Solid State Devices and Materials

Aug 23, 1994 - Aug 26, 1994
Pacifico Yokohama, Yokohama, Japan

[D-2-2] Silicon: Germanium Heterojunction Bipolar Transistors; From Experiment to Technology

B. S. Meyerson, D. L. Harame, M. M. Gilbert, K. T. Schonenberg, T. Tice, B. Scharf (1.IBM Research Division, IBM T. J. Watson Res. Cntr., 2.Analog Devices Inc.)

https://doi.org/10.7567/SSDM.1994.D-2-2

▲