[D-2-4] Modelling and Fabrication of a P-Channel SiGe-MOSFET with Very High Mobility and Transconductance

T. Vogelsan、F. Hofmann、H. Schafer、L. Risch、K. Hofmann (1.Siemens AG, Central Research and Development BT ACM)

https://doi.org/10.7567/SSDM.1994.D-2-4