A Novel Fabrication Method for Short Channel MOSFET&apos;s Using Self-Aligned Ultrashallow Junction Formation by Selective Si1-xGex CVD

Kinya GOTO; Junichi MUROTA; Fumitaka HONMA; Takashi MATSUURA; Yasuji SAWADA

doi:https://doi.org/10.7567/SSDM.1994.LD-20

[LD-20] A Novel Fabrication Method for Short Channel MOSFET's Using Self-Aligned Ultrashallow Junction Formation by Selective Si1-xGex CVD

Kinya GOTO、Junichi MUROTA、Fumitaka HONMA、Takashi MATSUURA、Yasuji SAWADA (1.Laboratory for Microelectronics, Research Institute of Electrical Communication, Tohoku University)

https://doi.org/10.7567/SSDM.1994.LD-20

1994 International Conference on Solid State Devices and Materials

[LD-20] A Novel Fabrication Method for Short Channel MOSFET's Using Self-Aligned Ultrashallow Junction Formation by Selective Si1-xGex CVD