A Novel Wire Transistor Structure with In-Plane Gate Using Direct Schottky Contacts to 2DEG

H. Okada; K. Jinushi; N.-J. Wu; T. Hashizume; H. Hasegawa

doi:https://doi.org/10.7567/SSDM.1994.LD-6

[LD-6] A Novel Wire Transistor Structure with In-Plane Gate Using Direct Schottky Contacts to 2DEG

H. Okada、K. Jinushi、N.-J. Wu、T. Hashizume、H. Hasegawa (1.Department of Electrical Engineering, Hokkaido University、2.Research Center for Interface Quantum Electronics, Hokkaido University)

https://doi.org/10.7567/SSDM.1994.LD-6

1994 International Conference on Solid State Devices and Materials

[LD-6] A Novel Wire Transistor Structure with In-Plane Gate Using Direct Schottky Contacts to 2DEG