InAs Field-Effect Transistors with a Deep Quantum Well Structure

S. Miya; N. Kuze; K. Nagase; A. Ichii; Y. Toyama; M. Ozaki; I. Shibasaki

doi:https://doi.org/10.7567/SSDM.1994.LD-7

1994 International Conference on Solid State Devices and Materials

Aug 23, 1994 - Aug 26, 1994
Pacifico Yokohama, Yokohama, Japan

[LD-7] InAs Field-Effect Transistors with a Deep Quantum Well Structure

S. Miya, N. Kuze, K. Nagase, A. Ichii, Y. Toyama, M. Ozaki, I. Shibasaki (1.Electronics materials & devices Laboratory, Asahi Chemical Ind. Co., LTD.)

https://doi.org/10.7567/SSDM.1994.LD-7

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