20% Reduction Both of Cell Area and of Mask Layers in Simplified TFT-SRAM Process

Akio Kawamura; Tomohiko Tateyama; Kazuyo Nakamura; Takashi Wada; Hiroshi Ohki; Akira Ishihama; Katsuji Iguchi; Keizo Sakiyama

doi:https://doi.org/10.7567/SSDM.1994.PA-4-13

[PA-4-13] 20% Reduction Both of Cell Area and of Mask Layers in Simplified TFT-SRAM Process

Akio Kawamura, Tomohiko Tateyama, Kazuyo Nakamura, Takashi Wada, Hiroshi Ohki, Akira Ishihama, Katsuji Iguchi, Keizo Sakiyama (1.VLSI Development Laboratories, SHARP Corporation)

https://doi.org/10.7567/SSDM.1994.PA-4-13

1994 International Conference on Solid State Devices and Materials

[PA-4-13] 20% Reduction Both of Cell Area and of Mask Layers in Simplified TFT-SRAM Process