[PA-4-13] 20% Reduction Both of Cell Area and of Mask Layers in Simplified TFT-SRAM Process

Akio Kawamura、Tomohiko Tateyama、Kazuyo Nakamura、Takashi Wada、Hiroshi Ohki、Akira Ishihama、Katsuji Iguchi、Keizo Sakiyama (1.VLSI Development Laboratories, SHARP Corporation)

https://doi.org/10.7567/SSDM.1994.PA-4-13