[PA-4-5] Impact of Source-Drain Extension Dose on Hot-Carrier Reliability in 0.1μm nMOSFETs

Yoshihiro Takao、Koh Watanabe、Seiichiro Kawamura (1.LSI Process Development Division, FUJITSU LIMITED)

https://doi.org/10.7567/SSDM.1994.PA-4-5