[PA-4-7] Ultra Short and Narrow Channel Si MOSFETs with Advanced SEG Isolation Fabricated by Ultra High Vacuum CVD

Atsushi HORI、Takehiro HIRAI、Mitsuo TANAKA (1.Semiconductor Research Center, Matsushita Electric Ind. Co.)

https://doi.org/10.7567/SSDM.1994.PA-4-7