[PB-2-2] Combined Effects of High-Energy Si, Zn and Ga Ion Implantation and Annealing on the Reduction of Threading Dislocations in GaAs on Si

Masao Tamura、Tohru Saitoh (1.Optoelectronics Technology Research Laboratory)

https://doi.org/10.7567/SSDM.1994.PB-2-2