InAs Field-Effect Transistors with Platinum Schottky Gate

Kanji Yoh; Hayato Takeuchi Satoshi Izumiya; Masataka Inoue

doi:https://doi.org/10.7567/SSDM.1994.PC-1-2

1994 International Conference on Solid State Devices and Materials

1994年8月23日〜 1994年8月26日
Pacifico Yokohama, Yokohama, Japan

[PC-1-2] InAs Field-Effect Transistors with Platinum Schottky Gate

Kanji Yoh、Hayato Takeuchi Satoshi Izumiya、Masataka Inoue (1.Research Center for Interface Quntum Electronics, Hokkaido University、2.Department of Electrical Engineering, Osaka Institute of Technology)

https://doi.org/10.7567/SSDM.1994.PC-1-2

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