InAs Field-Effect Transistors with Platinum Schottky Gate

Kanji Yoh; Hayato Takeuchi Satoshi Izumiya; Masataka Inoue

doi:https://doi.org/10.7567/SSDM.1994.PC-1-2

[PC-1-2] InAs Field-Effect Transistors with Platinum Schottky Gate

Kanji Yoh, Hayato Takeuchi Satoshi Izumiya, Masataka Inoue (1.Research Center for Interface Quntum Electronics, Hokkaido University, 2.Department of Electrical Engineering, Osaka Institute of Technology)

https://doi.org/10.7567/SSDM.1994.PC-1-2

1994 International Conference on Solid State Devices and Materials

[PC-1-2] InAs Field-Effect Transistors with Platinum Schottky Gate