Suppression of Boron Penetration in pMOS by Using Oxide Gettering Effect in Poly-Si Gate

Yung Hao Lin; Tien Sheng Chao; Chung Len Lee; Tan Fu Lei

doi:https://doi.org/10.7567/SSDM.1994.PD-4-4

[PD-4-4] Suppression of Boron Penetration in pMOS by Using Oxide Gettering Effect in Poly-Si Gate

Yung Hao Lin、Tien Sheng Chao、Chung Len Lee、Tan Fu Lei (1.Department of Electronics Engineering and Institute of Electronics National Chiao Tung University、2.National Nano Device Laboratory)

https://doi.org/10.7567/SSDM.1994.PD-4-4

1994 International Conference on Solid State Devices and Materials

[PD-4-4] Suppression of Boron Penetration in pMOS by Using Oxide Gettering Effect in Poly-Si Gate