[S-II-11] Void-Free Bonded SOI Substrates for High Voltage, High Current Vertical DMOS Type Power ICs

Tomohiro Hamajima、Kenya Kobayashi、Hiroaki Kikuchi、Kensuke Okonogi、Kenichi Arai、Yasuhito Ninomiya、Mitsuasa Takahashi (1.ULSI Device Development Laboratories Semiconductor Division NEC Corporation)

https://doi.org/10.7567/SSDM.1994.S-II-11