High-Reliability Programming Method Suitable for Flash Memories of More Than 256 Mb

Naoki Miyamoto; Takayuki Kawahara; Syun-ichi Saeki; Yusuke Jyouno; Masataka Kato; Katsutaka Kimura

doi:https://doi.org/10.7567/SSDM.1995.B-2-4

[B-2-4] High-Reliability Programming Method Suitable for Flash Memories of More Than 256 Mb

Naoki Miyamoto、Takayuki Kawahara、Syun-ichi Saeki、Yusuke Jyouno、Masataka Kato、Katsutaka Kimura (1.Hitachi Device Engineering, Co., Ltd.、2.Central Research Laboratory, Hitachi Ltd.、3.Semiconductor & Integrated Circuits Division, Hitachi Ltd.)

https://doi.org/10.7567/SSDM.1995.B-2-4

1995 International Conference on Solid State Devices and Materials

[B-2-4] High-Reliability Programming Method Suitable for Flash Memories of More Than 256 Mb