[B-4-4] Anomalous Capture and Emission by Individual Si-SiO2 Interface Defects in Advanced Self-Aligned Bipolar Transistors

J. -Q. LU、S. SCHOTTL、F. KOCH、R. MAHNKOPF、H. KLOSE (1.Physik-Dept. E16, Technical University Munich、2.Siemens AG, Corporate R&D)

https://doi.org/10.7567/SSDM.1995.B-4-4