[B-4-4] Anomalous Capture and Emission by Individual Si-SiO2 Interface Defects in Advanced Self-Aligned Bipolar Transistors

J. -Q. LU, S. SCHOTTL, F. KOCH, R. MAHNKOPF, H. KLOSE (1.Physik-Dept. E16, Technical University Munich, 2.Siemens AG, Corporate R&D)

https://doi.org/10.7567/SSDM.1995.B-4-4