Hydrogen Passivation on the Grain Boundary and Intragranular Defects in Various Polysilicon Thin Film Transistors

Kwon-Young Choi; Juhn-Suk Yoo; Hong-seok Choi; Min-Koo Han; Yong-Sang Kim; In-Gon Lim

doi:https://doi.org/10.7567/SSDM.1995.B-5-3

[B-5-3] Hydrogen Passivation on the Grain Boundary and Intragranular Defects in Various Polysilicon Thin Film Transistors

Kwon-Young Choi、Juhn-Suk Yoo、Hong-seok Choi、Min-Koo Han、Yong-Sang Kim、In-Gon Lim (1.Department of Electrical Engineering, Seoul National University、2.Department of Electrical Engineering, Myongji University、3.LG Electronics Research Center)

https://doi.org/10.7567/SSDM.1995.B-5-3

1995 International Conference on Solid State Devices and Materials

[B-5-3] Hydrogen Passivation on the Grain Boundary and Intragranular Defects in Various Polysilicon Thin Film Transistors