[C-1-4] Precise Control of SiO2 Etching Characteristics Using Mono-Layer Adsorption of HF/H2O Vapor

Naruhiko NAKANISHI、Nobuyoshi KOBAYASHI (1.Semiconductor Development Center, Semiconductor & Integrated Circuits Div., Hitachi, Ltd.)

https://doi.org/10.7567/SSDM.1995.C-1-4