[C-2-4] Study of Penetrated Boron Concentration through Ultra-Thin Oxynitrided Gate Dielectrics

M. Kawata、M. Kitakata、E. Hasegawa、A. Ishitani、K. S. Krisch、M. L. Green、D. Brasen、L. Manchanda、L. C. Feldman (1.ULSI Device Development Laboratories, NEC Corp.、2.AT&T Bell Laboratories)

https://doi.org/10.7567/SSDM.1995.C-2-4