[C-2-4] Study of Penetrated Boron Concentration through Ultra-Thin Oxynitrided Gate Dielectrics

M. Kawata, M. Kitakata, E. Hasegawa, A. Ishitani, K. S. Krisch, M. L. Green, D. Brasen, L. Manchanda, L. C. Feldman (1.ULSI Device Development Laboratories, NEC Corp., 2.AT&T Bell Laboratories)

https://doi.org/10.7567/SSDM.1995.C-2-4