[C-2-6] Effect of Substrate Boron Concentration on the Integrity of 450℃-Annealed Ion-Implanted Junctions

Akira NAKADA、Mauricio Massazumi OKA、Yukio TAMAI、Tadashi SHIBATA、Herzl AHARONI、Tadahiro OHMI (1.Department of Electronic Engineering, Faculty of Engineering, Tohoku University、2.Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University)

https://doi.org/10.7567/SSDM.1995.C-2-6