[D-5-4] 1100 Hours Stable Operation in 0.87-μm InGaP/GaAs LED's on Si Substrates Grown by MOCVD

Takashi EGAWA、Jie DONG、Kou MATSUMOTO、Takashi JIMBO、Masayoshi UMENO (1.Research Center for Micro-Structure Devices, Nagoya Institute of Technology、2.Nippon Sanso Corporation, Tsukuba Laboratories、3.Department of Electrical and Computer Engineering, Nagoya Institute of Technology)

https://doi.org/10.7567/SSDM.1995.D-5-4