Electrical Properties of Ferroelectric Gate HEMT Structures

Shun-ichiro OHMI; Makoto YOSHIHARA; Takeo OKAMOTO; Eisuke TOKUMITSU; Hiroshi ISHIWARA

doi:https://doi.org/10.7567/SSDM.1995.D-6-5

1995 International Conference on Solid State Devices and Materials

1995年8月21日〜 1995年8月24日
International House, Osaka, Japan

[D-6-5] Electrical Properties of Ferroelectric Gate HEMT Structures

Shun-ichiro OHMI、Makoto YOSHIHARA、Takeo OKAMOTO、Eisuke TOKUMITSU、Hiroshi ISHIWARA (1.Precision & Intelligence Laboratory, Tokyo Institute of Technology)

https://doi.org/10.7567/SSDM.1995.D-6-5

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