Scanning Tunneling Microscope Study of (001) InP Surface Prepared by Gas Source Molecular Beam Epitaxy

B. X. Yang; Y. Ishikawa; T. Ozeki; H. Hasegawa

doi:https://doi.org/10.7567/SSDM.1995.D-7-4

1995 International Conference on Solid State Devices and Materials

1995年8月21日〜 1995年8月24日
International House, Osaka, Japan

[D-7-4] Scanning Tunneling Microscope Study of (001) InP Surface Prepared by Gas Source Molecular Beam Epitaxy

B. X. Yang、Y. Ishikawa、T. Ozeki、H. Hasegawa (1.Research Center for Interface Quantum Electronics and Department of Electrical Engineering, Hokkaido University)

https://doi.org/10.7567/SSDM.1995.D-7-4

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