Initial Stage of SiO2/Si Interface Formation on Hydrogen-Terminated Silicon Surfaces

E. IIJIMA; T. AIBA; K. YAMAUCHI; H. NOHIRA; N. TATE; M. KATAYAMA; T. HATTORI

doi:https://doi.org/10.7567/SSDM.1995.PA-1-7

[PA-1-7] Initial Stage of SiO2/Si Interface Formation on Hydrogen-Terminated Silicon Surfaces

E. IIJIMA、T. AIBA、K. YAMAUCHI、H. NOHIRA、N. TATE、M. KATAYAMA、T. HATTORI (1.Department of Electrical and Electronic Engineering, Musashi Institute of Technology、2.Shin-Etsu Handotai Co. Ltd.)

https://doi.org/10.7567/SSDM.1995.PA-1-7

1995 International Conference on Solid State Devices and Materials

[PA-1-7] Initial Stage of SiO2/Si Interface Formation on Hydrogen-Terminated Silicon Surfaces