Correlating Charge-to-Breakdown with Constant-Current Injection to Gate Oxide Lifetime under Constant-Voltage Stress

Koji ERIGUCHI; Yukiharu URAOKA

doi:https://doi.org/10.7567/SSDM.1995.PC-1-7

[PC-1-7] Correlating Charge-to-Breakdown with Constant-Current Injection to Gate Oxide Lifetime under Constant-Voltage Stress

Koji ERIGUCHI、Yukiharu URAOKA (1.Semiconductor Research Center, Matsushita Electric Ind. Co., Ltd.、2.Liquid Crystal Display Development Center, Matsushita Electric Ind. Co., Ltd.)

https://doi.org/10.7567/SSDM.1995.PC-1-7

1995 International Conference on Solid State Devices and Materials

[PC-1-7] Correlating Charge-to-Breakdown with Constant-Current Injection to Gate Oxide Lifetime under Constant-Voltage Stress