[PC-11-6] Influence of N2O-Oxynitridation on Interface Trap Generation in Surface-Channel PMOSFETs

Toshimasa MATSUOKA、Shigenari TAGUCHI、Kenji TANIGUCHI Chihiro HAMAGUCHI、Seizo KAKIMOTO、Keiichiro UDA (1.Department of Electronic Engineering, Osaka University、2.Central Research Laboratories, Sharp Corporation)

https://doi.org/10.7567/SSDM.1995.PC-11-6