Comparison of CVD and PVD TaN as Diffusion Barriers for Al and Cu Metallization

S. C. Sun; M. H. Tsai; C. E. Tsai; H. T. Chiu

doi:https://doi.org/10.7567/SSDM.1995.PC-3-3

1995 International Conference on Solid State Devices and Materials

1995年8月21日〜 1995年8月24日
International House, Osaka, Japan

[PC-3-3] Comparison of CVD and PVD TaN as Diffusion Barriers for Al and Cu Metallization

S. C. Sun、M. H. Tsai、C. E. Tsai、H. T. Chiu (1.National Nano Device Laboratory and Department of Electronics Engineering、2.Institute of Applied Chemistry National Chiao Tung University)

https://doi.org/10.7567/SSDM.1995.PC-3-3

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