Schottky Barrier Height Reduction for p-ZnSe Contacts by Sulfur Treatment

M. Onomura; S. Saito; J. Rennie; Y. Nishikawa; P. J. Parbrook; M. Ishikawa; G. Hatakoshi

doi:https://doi.org/10.7567/SSDM.1995.PC-9-6

1995 International Conference on Solid State Devices and Materials

1995年8月21日〜 1995年8月24日
International House, Osaka, Japan

[PC-9-6] Schottky Barrier Height Reduction for p-ZnSe Contacts by Sulfur Treatment

M. Onomura、S. Saito、J. Rennie、Y. Nishikawa、P. J. Parbrook、M. Ishikawa、G. Hatakoshi (1.Materials and Devices Research Laboratories, Toshiba Corporation)

https://doi.org/10.7567/SSDM.1995.PC-9-6

▲