Schottky Barrier Height Reduction for p-ZnSe Contacts by Sulfur Treatment

M. Onomura; S. Saito; J. Rennie; Y. Nishikawa; P. J. Parbrook; M. Ishikawa; G. Hatakoshi

doi:https://doi.org/10.7567/SSDM.1995.PC-9-6

1995 International Conference on Solid State Devices and Materials

Aug 21, 1995 - Aug 24, 1995
International House, Osaka, Japan

[PC-9-6] Schottky Barrier Height Reduction for p-ZnSe Contacts by Sulfur Treatment

M. Onomura, S. Saito, J. Rennie, Y. Nishikawa, P. J. Parbrook, M. Ishikawa, G. Hatakoshi (1.Materials and Devices Research Laboratories, Toshiba Corporation)

https://doi.org/10.7567/SSDM.1995.PC-9-6

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