MOMBE Growth of Nitrogen-Doped p-Type ZnSe

Go SATO; Takahiro NUMAI; Mitsuo HOSHIYAMA; Ikuo SUEMUNE; Hideaki MACHIDA; Norio SHIMOYAMA

doi:https://doi.org/10.7567/SSDM.1995.PC-9-8

1995 International Conference on Solid State Devices and Materials

1995年8月21日〜 1995年8月24日
International House, Osaka, Japan

[PC-9-8] MOMBE Growth of Nitrogen-Doped p-Type ZnSe

Go SATO、Takahiro NUMAI、Mitsuo HOSHIYAMA、Ikuo SUEMUNE、Hideaki MACHIDA、Norio SHIMOYAMA (1.Research Institute for Electronic Science, Hokkaido University、2.Trichemical Laboratory)

https://doi.org/10.7567/SSDM.1995.PC-9-8

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