[PD-2-2] Low Noise Characteristics of 0.2 μm Al0.24Ga0.76As/In0.15Ga0.85As/GaAs Pseudomorphic HEMTs with Wide Head T-Shaped Multifinger Gate

Hyung-Sup YOON、Jin-Hee LEE、Chul-Soon PARK、Kwang-Eui PYUN、Hyung-Moo PARK (1.Semiconductor Division, Electronics and Telecommunications Research Institute)

https://doi.org/10.7567/SSDM.1995.PD-2-2