Anomalous Effect in La2-xSrxCuO4 on Doping Level x=1/4n

M. Sugahara; A. Ito; S. Maejima; S. B. Wu; H. Gao; K. Uno; X. Y. Han; H. F. Lu; N. Haneji; N. Yoshikawa

doi:https://doi.org/10.7567/SSDM.1995.PD-3-10

1995 International Conference on Solid State Devices and Materials

Aug 21, 1995 - Aug 24, 1995
International House, Osaka, Japan

[PD-3-10] Anomalous Effect in La2-xSrxCuO4 on Doping Level x=1/4n

M. Sugahara, A. Ito, S. Maejima, S. B. Wu, H. Gao, K. Uno, X. Y. Han, H. F. Lu, N. Haneji, N. Yoshikawa (1.Faculty of Engineering, Yokohama National University)

https://doi.org/10.7567/SSDM.1995.PD-3-10

▲